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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11032 DESCRIPTION *Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A *Complement to Type MJ11033 APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 120 120 5 50 100 2 300 200 -55~+200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.584 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ11032 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA 2.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 500mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 25A; IB= 250mA 3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 50A; IB= 500mA VCE=120V; RBE=1k VCE=120V; RBE=1k; TC=150 VCE= 50V; IB= 0 4.5 2.0 5.0 2.0 V ICER Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 25A, VCE= 5V 1000 18000 hFE-2 DC Current Gain IC= 50A, VCE= 5V 400 isc Websitewww.iscsemi.cn |
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